(China (Mainland))
Product Summary
The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. It is characterized by 30mHZ, 28V, IMD -30dB, common emitter, gold metallization and so on.
Parametrics
Absolute maximum ratings (Tcase = 25°C): (1)VCBO, Collector-Base Voltage: 65 V; (2)VCEO, Collector-Emitter Voltage: 36 V; (3)VEBO, Emitter-Base Voltage: 4.0 V; (4)IC, Device Current: 20 A; (5)PDISS, Power Dissipation: 270 W; (6)TJ, Junction Temperature: +200 °C; (7)TSTG, Storage Temperature: - 65 to +150 °C.
Features
Features: (1)30 mhz; (2)28 volts; (3)imd -30 db; (4)common emitter; (5)gold metallization pout = 125 w min; (6)with 15 db gain.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SD1407 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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SD1407-16 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN 28.0V 30MHz |
Data Sheet |
Negotiable |
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